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| 2SK3352 P- Channel Silicon MOS FET DC-DC Converter Features and Applications * Low ON-state resistance. * Very high - speed switching. * 4V drive. Absolute Maximum Ratings / Ta=25C Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP PW10s, duty cycle1% Allowable power Dissipation PD Tc=25C Channel Temperature Storage Temperature Electrical Characteristics / Ta=25C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source on State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-oFF Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Marking : K3352 Package Dimensions SMP-FD (unit : mm) 0.9 10.2 4 4.5 1.3 TENTATIVE Tch Tstg 30 20 45 80 1.65 40 150 --55 to +150 min unit V V A A W W C C typ max 1 10 2.4 27 11 15 1400 420 210 14 530 100 150 28 4.6 5 1.0 15 21 unit V A A V S m m pF pF pF ns ns ns ns nC nC nC V V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA , VDS=30V , VGS=16V , VDS=10V , VDS=10V , ID=20A , ID=10A , VDS=10V , VDS=10V , VDS=10V , VGS=0 VGS=0 VDS=0 ID=1mA ID=20A VGS=10V VGS=4.5V f=1MHz f=1MHz f=1MHz 30 1.0 19 See specified Test Circuit VDS=10V, VGS=10V, ID=20A IS=45A , VGS= 0 1.2 SMP-FA (unit : mm) 0.9 10.2 4 8.8 4.5 SMP(unit:mm) 10.2 0.9 1.3 4 30 30 4.5 1.3 1.5max 8.8 9.9 11.5 9.9 1.4 2.0 2.5 20.9 1.6 3.0 4.5 1.35 2.55 1.2 2.55 1 2 3 2.7 9.4 0.8 11.0 1 0.8 2 3 0to0.3 0.4 1.2 0.8 0.4 1.5 1.2 8.8 0.4 2.55 2.55 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.7 2.55 2.55 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.7 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain Specifications and information herin are subject to change without notice. 2.55 2.55 SANYO Electric Co., Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 990915TM2fXHD 2SK3352 TENTATIVE Switching Time Test Circuit VIN 10V 0V VIN PW=10S D.C.1% VDD=15V ID=20A RL=0.75 D VOUT G 2SK3352 P.G 50 S 990915TM2fXHD |
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